The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Jul. 24, 1995
Applicant:
Inventor:
Hikaru Hida, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ; 257201 ; 257615 ;
Abstract
In an N-channel HEMT, a channel layer having an electron affinity .chi..sub.1, a spacer layer having an electron affinity .chi..sub.2, and an electron supply layer having an electron affinity .chi..sub.3 smaller than the electron affinity .chi..sub.1 and larger than the electron affinity .chi..sub.2 are laminated in this sequence. Both the channel layer and the electron supply layer include indium (In), and a percentage composition of indium in the channel layer is larger than a percentage composition of indium in the electron supply layer.