The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Aug. 06, 1997
Kyoung-mo Yang, Suwon, KR;
Sang-kil Lee, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A submicron level dimension reference for use with a scanning electron microscope in a semiconductor device fabrication apparatus. The reference has a first insulating layer with a first pattern formed on a semiconductor wafer substrate. A plurality of contacts are formed between the first pattern of the first insulating layer such that the contacts directly communicate the wafer substrate. The contacts are capable of carrying an electrical charge. An electrically conductive layer is formed over the contacts and the first insulating layer. A second insulating layer with a second pattern is formed over the conductive layer. Electrical charges generated by radiating the scanning electron microscope on the submicron level dimension reference are transferred from the first and second insulating layers to the wafer substrate via the conductive layer and the plurality of contacts.