The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 11, 2000

Filed:

Feb. 26, 1998
Applicant:
Inventors:

David W Weyburne, Maynard, MA (US);

Qing S Paduano, Arlington, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-7 ; 438 16 ; 438 29 ;
Abstract

The invention works by taking optical reflectance measurements on the deposited layers at different wavelengths and fitting the measured results to extract the thicknesses and compositions. The process of the present invention simultaneously measures the thicknesses of elemental and binary semiconductors' layers and the thicknesses and composition of ternary layers. Highly precise thickness and composition estimates and wafer maps of the growth rates and composition are provided by (1) measuring in a wavelength range at which the index of refractions are rapidly varying and (2) growing a special high reflectance test structure consisting of alternating layers of the materials to be measured.


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