The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2000
Filed:
Aug. 14, 1998
Applicant:
Inventors:
Martin P Harmer, Emmaus, PA (US);
Helen M Chan, Bethlehem, PA (US);
Ho-Yong Lee, Seoul, KR;
Adam M Scotch, Easton, PA (US);
Tao Li, Bethlehem, PA (US);
Frank Meschke, Juelich, DE;
Ajmal Khan, Lansdale, PA (US);
Assignee:
Competitive Technologies of PA, Inc., Fairfield, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117-8 ; 117-2 ; 117-3 ; 117-7 ;
Abstract
A method is disclosed for forming a single crystal relaxor based material, including the following steps: providing a seed single crystal plate, providing a first and second polycrystalline structure, bonding the top surface of the seed crystal plate to the outer surface of the first polycrystalline structure, bonding the bottom surface of the seed crystal plate to the outer surface of the second polycrystalline structure, and annealing the bonded structure.