The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
May. 29, 1998
Hiromu Yamaguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A capacitor with a high dielectric-constant dielectric and a thick lower electrode decreases the leakage current. The thick lower electrode is on an interlayer insulating layer. Typically, the interlayer insulating layer is formed on or over a semiconductor substrate. The lower electrode has a top face, a bottom face, and side faces. The bottom face of the lower electrode is adjacent to the interlayer insulating layer. An insulating cap or cover layer is on and contacts the top face of the lower electrode. The insulating cap or cover layer covers the top face of the lower electrode and uncovers the side faces of the lower electrode. A capacitor dielectric layer covers and contacts the side faces of the lower electrode and the insulating cap or cover layer. An upper electrode is on and contacts the capacitor dielectric layer. The capacitor dielectric layer is sandwiched by the upper and lower electrodes to thereby constitute a capacitor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile