The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Sep. 28, 1998
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257306 ; 257295 ; 257296 ; 438240 ; 438396 ;
Abstract
In a semiconductor storage device, a capacitor section is connected with a drain region of a MOS transistor by means of a polysilicon plug. The capacitor section has a lower electrode, a ferroelectric thin film, and an upper electrode stacked in this order. A TiN barrier metal is placed between the lower electrode and the plug. The lower electrode has a lower film made of a platinum-rhodium alloy and an upper film made of a platinum-rhodium alloy oxide which is in contact with the ferroelectric thin film.