The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Dec. 19, 1997
Toshio Kameshima, Sagamihara, JP;
Yutaka Endo, Utsunomiya, JP;
Noriyuki Kaifu, Hachioji, JP;
Isao Kobayashi, Atsugi, JP;
Hideki Nonaka, Utsunomiya, JP;
Takashi Ogura, Utsunomiya, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A high S/N ratio, stable, and high read rate photoelectric conversion device is formed by the same process as that for a TFT in a photoelectric conversion apparatus, and includes a photoelectric conversion device having a first electrode layer, a semiconductor layer, and a second electrode layer, first and second switch devices each having first and second main electrodes, first and second power sources, and a reading circuit, where the first electrode layer is electrically connected to the first main electrode, the second electrode layer is electrically connected to a power source, and the second main electrode is electrically connected to the reading circuit. The switch device is turned on in refresh driving for applying an electric field from the power source to the second electrode layer in a direction for guiding carriers from the semiconductor layer to the second electrode layer, thereby fixing a potential on a first electrode layer side of the photoelectric conversion device.