The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Aug. 07, 1998
Kay Y Blohowiak, Issaquah, WA (US);
Darryl F Garrigus, Issaquah, WA (US);
Thomas S Luhman, Bellevue, WA (US);
Kevin E McCrary, Port Orchard, WA (US);
Michael Strasik, Issaquah, WA (US);
Ilhan Aksay, Princeton, NJ (US);
Fatih Dogan, Seattle, WA (US);
William C Hicks, Olympia, WA (US);
Corrie B Martin, Seattle, WA (US);
The Boeing Company, Seattle, WA (US);
Abstract
We make large (in excess of 2 cm in diameter), single crystal YBa.sub.2 Cu.sub.3 O.sub.7-x [123 YBCO] crystals, where x.ltoreq.0.6, in a seventeen step process or some variant thereof from finely ground and well mixed 123 YBCO and 211 YBCO powders with a small amount of Pt by controlling the rate of cooling from within a compact of the powders using a temperature gradient in the radial and axial planes (independently) of about 1-1.degree. C./inch diameter of compact to nucleate the crystal growth. We promote crystal growth as well using a samarium oxide seed crystal, preferably SmBa.sub.2 Cu.sub.3 O.sub.(7-y), where y.ltoreq.1.6. After nucleation we cool the compact slowly at a rate from about 0.1-1.degree. C./hr to promote the single crystal development.