The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Feb. 24, 1998
Applicant:
Inventor:
Toshiyuki Tohda, Higashiosaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438695 ; 438715 ; 438717 ; 438725 ; 216 41 ; 216 46 ; 216 67 ;
Abstract
A method for producing a semiconductor device comprises forming a film to be etched, an organic antireflective film and a resist mask on a substrate in this order; and before etching the film to be etched, dry-etching the organic antireflective film into a predetermined configuration by use of the resist mask and an etching gas containing chlorine atom and oxygen atom with maintaining the substrate at such a temperature that allows deposition of a substance produced by reaction of the organic antireflective film with chlorine atom contained in the etching gas.