The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Sep. 12, 1997
Applicant:
Inventors:
Leon Goldstein, Chaville, FR;
Francedilla.ois Brillouet, Clamart, FR;
Cathrine Fortin, Marcoussis, FR;
Joel Jacquet, Limours, FR;
Paul Salet, Clamart, FR;
Jean Luc Lafragette, Marolles En Hurepoix, FR;
Antonina Plais, Paris, FR;
Assignee:
Alcatel, Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 46 ; 438 47 ; 438 29 ; 372 43 ; 372 44 ;
Abstract
An epitaxial deposition process is used to deposit materials that can be crystallized lattice matched to gallium arsenide onto an indium phosphide crystalline wafer. A material of this kind forms a metamorphic layer. Metamorphic layers of this kind constitute two semiconductor Bragg mirrors to form resonant cavities of surface emitting lasers of a matrix. This matrix is consolidated by a silicon support. Applications include optical telecommunications.