The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
May. 04, 1998
Hideki Itoh, Nagasaki, JP;
Sony Corporation, , JP;
Abstract
In a NAND-type memory device, an area required to form a memory array thereof can be reduced. In one NAND-type memory device 30, a bit line 32A and another bit line 32B are extended in parallel to each other. These bit lines 32A and 32B are connected via bit contacts 36A and 36B to a first memory cell 34A, and a second memory cell located adjacent to the first memory cell 34A along a word line direction. A bit contact 36A and another bit contact 36B are arranged along a diagonal line direction while intersecting the respective first and second memory cells, respectively. The bit contact 36A is employed so as to connect a drain region of the first memory cell 34A to the bit line 32A. The bit contact 36B is employed in order to connect a drain region of the second memory cell to the bit line 32B. On the opposite side of the bit contact 36A by sandwiching the first memory cell 34A, a source contact 38A for connecting a source diffusion layer to a source line is provided adjacent to the bit contact 36B. A source line 40 is formed between a control gate 42 and the bit line 32, and then is connected via another source contact 38B to a diffusion layer 44.