The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Nov. 16, 1998
Applicant:
Inventors:
Kazushi Kamiyama, Uji, JP;
Shinji Inoue, Souraku-gun, JP;
Satoru Tsubokura, Gamo-gun, JP;
Hiroyuki Kinoshita, Yasu-gun, JP;
Takashi Uto, Youkaichi, JP;
Assignee:
Kyocera Corporation, Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B / ;
U.S. Cl.
CPC ...
359719 ; 359245 ;
Abstract
A hemispheric lens of a single crystal having a refractive index of 2.0 or over is used as a SIL lens of an optical system for optical recording. The single crystal is LiNbO3, LiTaO3, rutile phase TiO2, PbMoO4, TeO2, SrTiO3, ZrO2, SrNbO3, SrTaO3, CaNbO3, CaTaO3, CaTiO3, KNbO3, KTaO3, BaZrO3, SrZrO3, CaZrO3, KNbO3, KTaO3, BaZrO3, SrZrO3, CaZrO3, ZnWO4, ZnMoO4, CdWO4, CdMoO4, PbWO4, Bi20SiO12, Bi20GeO12, Bi4Si3O12, Bi4Ge3O12, GaP, ZnTe, ZnSe, Cu3TaSe4 or ZnS.