The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Jan. 24, 1997
Applicant:
Inventor:
Hiroyuki Miwa, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257588 ; 257592 ;
Abstract
A p+ type graft base layer is formed both in a base layer of a p type epitaxial layer in a base opening of an insulating layer formed on a collector layer of an n type epitaxial layer and on an upper layer of the n type epitaxial layer contacting the p type epitaxial layer so that the graft base layer is positioned near the edge of the base opening, whereby a pn junction is formed away from the edge of the base opening where crystallinity of the p type epitaxial layer is deteriorated.