The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Nov. 05, 1997
Hiroyuki Miwa, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
In order to prevent an epitaxial layer from contamination by metal when the epitaxial layer is formed on a substrate on which a conductor film comprising a metallic film is formed, a bipolar transistor (semiconductor device) 1 has the first conductor pattern 8 comprising a high-melting metallic film or a high-melting metallic compound film formed on the substrate 4, and the second conductor pattern 9 comprising a non-metallic film formed so as to cover the first conductor pattern 8. On the substrate 4 is formed the first conductivity type base layer 10 on the semiconductor layer comprising an epitaxial layer so as to come in contact with the second conductor pattern 9. Furthermore, when manufacturing the bipolar transistor 1, the semiconductor layer as the base layer 10 is formed with the epitaxial process after the first conductor pattern 8 is covered by the second conductor pattern 9.