The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
May. 28, 1998
Helmut Klose, Poughkeepsie, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A read-only memory cell configuration and a method for its production include a substrate formed of semiconductor material having memory cells disposed in a cell field in a region of a main area. Each memory cell has at least one MOS transistor with a source region, a drain region, a channel region, a gate dielectric and a gate electrode. The drain region is connected to a bit line and the gate electrode is connected to a word line. The MOS transistor is formed by a trench starting at the main area and reaching as far as the source region. Side walls of the trench are disposed at an angle of approximately 45.degree. to approximately 80.degree. relative to the main area and are doped with a doping material of a predetermined conductivity for defining the programming of the MOS transistor.