The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Nov. 07, 1997
Riccardo Depetro, Domodossola, IT;
Michele Palmieri, Settimo Milanese, IT;
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Abstract
The DMOS transistor includes an n drain region, a p body region which forms, with the drain region, a junction having at least one edge portion with a small radius of curvature, an n+ source region which delimits a channel in the body region, p+ body contact regions, a gate electrode, a source and body electrode, and a drain electrode. To prevent the 'snap-back' phenomenon when the junction is reverse biased with the source, body and gate electrodes short-circuited, a p+ region is associated with each of the edge portions having a small radius of curvature and is arranged so as to be closer to the associated edge portion than any part of the source region.