The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 28, 2000

Filed:

Dec. 22, 1997
Applicant:
Inventor:

Akihiko Ochiai, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257295 ;
Abstract

A capacitor structure of a semiconductor memory cell, comprises: a lower electrode formed on an insulation layer; a capacitor insulation film in form of a ferroelectric thin film formed on the lower electrode; and an upper electrode formed on the capacitor insulation layer, the lower electrode including a column-shaped projection made of a conductive material formed on the insulation layer, and a lower electrode layer covering the projection, and the ferroelectric thin film being formed on the lower electrode layer as originally stacked. A method for fabricating a capacitor structure of a semiconductor memory cell, comprises the steps of: forming a conductive material layer on an insulation layer, then patterning the conductive material layer to form a column-shaped projection of a conductive material on the insulation layer; stacking a lower electrode layer on the insulation layer including the surface of the column-shaped projection; stacking a ferroelectric thin film on the lower electrode layer as originally stacked; stacking an upper electrode layer on the ferroelectric thin film; and patterning the lower electrode layer, the ferroelectric thin film and the lower electrode layer to form a capacitor structure including a lower electrode, a capacitor insulation film in form of the ferroelectric thin film, and an upper electrode.


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