The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Feb. 11, 1998
Wei-Chou Hsu, Tainan, TW;
Chang-Luen Wu, Tainan, TW;
National Science Council, Taipei, TW;
Abstract
Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n.sup.+ -GaAs substrates. The real-space transfer transistors (RST), the collector is located under the substrate, reveal very strong negative differential resistance phenomena. The RST structure using an InGaAs channel manifests superior characteristics of a very high peak-to-valley current ratio up to 430,000 at room temperature, a peak current as high as 100 mA, very sharp charge injection, and a valley current as broad as 5.5V. Meanwhile, high performance heterostructure field effect transistors can be implemented on the same wafer by further evaporating a gate between source and drain electrodes. In order to significantly reduce leakage current, an ohmic recession is made at the source and drain. These new multiple-functions device may be used in high-speed, low-noise, and/or high power microwave oscillators and amplifiers.