The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2000
Filed:
Jul. 23, 1997
Young Kwon Jun, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for forming a metal line of a semiconductor device includes the steps of: forming an insulating film on a semiconductor substrate including a lower layer line; forming a via hole to partially expose the lower layer line by selectively removing the insulating film; forming a first conductivity material layer on the insulating film including the via hole; forming a plug layer by selectively removing the first conductivity material layer so that it remains only in the via hole; performing a resistance-lowering treatment on the plug layer to remove its impurities; and forming a second conductivity material layer on the insulating film including the plug layer to form an upper layer line.