The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 21, 2000

Filed:

Apr. 14, 1997
Applicant:
Inventors:

Yutaka Hayashi, Tsukuba, JP;

Masaaki Kamiya, Tokyo, JP;

Yoshikazu Kojima, Tokyo, JP;

Hiroaki Takasu, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 30 ; 438158 ; 438151 ;
Abstract

A method of fabricating a light valve device comprises forming a substrate having stacked layers including a light-shielding thin film layer, an insulating film, and a single crystalline semiconductor thin film stacked in this order on a transparent support substrate. A light-shielding layer pattern is formed by selectively etching the stacked layers. Thereafter, a switching element is formed comprised of a transistor having a channel region formed in the single crystalline semiconductor thin film and a main gate electrode covering the channel region. The channel region is provided over the light-shielding pattern layer to prevent light incident from the transparent support substrate from illuminating the channel region to suppress a photo-induced leakage current in the channel region. A transparent electrode is formed and is electrically connected to the switching element. An opposing substrate is then provided over the substrate at the side of the single crystalline semiconductor thin film, and an electro-optical material layer is interposed between the substrate and the opposing substrate.


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