The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
May. 08, 1998
Applicant:
Inventor:
Teruo Suzuki, Kasugai, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257501 ; 257504 ; 257506 ; 257509 ; 257519 ;
Abstract
A semiconductor device formed on an epitaxial substrate includes a high-resistance region in the vicinity of an interface between a doped semiconductor substrate and an epitaxial layer thereon. The high-resistance region is advantageously formed by an ion implantation process of a dopant opposite to a dopant contained in the doped semiconductor substrate such that there is formed a depletion of carriers in the vicinity of the foregoing interface.