The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Oct. 31, 1997
Applicant:
Inventor:
Toshiro Shinohara, Kanagawa, JP;
Assignee:
Nissan Motor Co., Ltd., Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257342 ; 257331 ; 257341 ;
Abstract
A UMOS semiconductor device has a surge absorbing structure around a drain lead region. A surge absorbing region such as an anode region or a region forming a punch-through or reach-through structure is formed near the drain lead region, and surrounded by a source region or source regions. The surge absorbing region forms a diode such as a zener diode with a highly doped buried layer or a drain region. With the diode, the surge absorbing structure controls the electric field around the drain lead region and thereby protects the gate insulating film from being damaged by a drain surge.