The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Dec. 12, 1997
Applicant:
Inventor:
Yasushi Amamiya, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257198 ; 257197 ; 257586 ; 257587 ;
Abstract
In a bipolar transistor including a semi-insulating substrate, a collector layer formed on the semi-insulating substrate and a base layer formed on the collector layer, a base contact layer is in contact; with a part of a lower surface of the base layer.
Quick Actions:
Amamiya, Yasushi. (2000). Bipolar transistor having base contact layer in contact with lower (U.S. Patent No. 6037616). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6037616
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile