The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
May. 26, 1998
Isamu Matsuyama, Toyko, JP;
Seiji Nishi, Toyko, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A metal-semiconductor field effect transistor includes an AlGaAs buffer layer made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, and a channel layer made of an n-type doped In.sub.y Ga.sub.1-y As, wherein 0<y<0.4, having a thickness equal to or less than a critical thickness for lattice-matching with GaAs. Further, a doped AlGaAs layer is interposed between the AlGaAs buffer layer and the channel layer. The doped AlGaAs layer is made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, is doped with Si of a concentration of 5*10.sup.17 cm.sup.-3 or more, and has a thickness which is sufficient to provide a barrier against holes caused by a donor depletion region.