The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Feb. 09, 1998
Minakshisundaran Balasubramanian Anand, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention provides a way how to use a technique for forming the contact of a diffusion layer in a self-alignment manner in combination with a salicide technique. The most important finding in the way is that when an insulating film is deposited over the entire surface, the insulating film deposited on a shared diffusion layer which is present in a depressed portion between two electrodes is thinner in a natural course of events than that deposited on open-surfaces of the two electrodes. When such an insulating film different in thickness is etched, the relatively thin insulating film formed on the shared diffusion layer is substantially completely removed, whereas the relatively thick insulating film formed on the two electrodes is not completely removed and remains as a thin film. Hence, if the silicide layer is formed on the diffusion layer and the electrodes before the insulating film is deposited, the insulating film formed on the shared diffusion layer is selectively removed while leaving the insulating film formed on the electrodes.