The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Jun. 28, 1999
Hajime Matsuda, Nakakoma-gun, JP;
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Abstract
A fabricating process of a semiconductor device includes the steps of forming a first photoresist layer on a surface of a substrate so as to cover a gate electrode on the substrate, forming a second photoresist layer on the fist photoresist layer with an increased sensitivity, forming a third photoresist layer on the second photoresist layer with a reduced sensitivity, forming an opening in a photoresist structure thus formed of the first through third photoresist layers such that the opening exposes the gate electrode and such that the opening has a diameter that increases gradually from the first photoresist layer to the second photoresist layer. Further, a low-resistance metal layer is deposited on the photoresist structure including the opening, such that the metal layer forms a low-resistance electrode on the gate electrode.