The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Jul. 15, 1997
Applicant:
Inventors:
Norio Hayafuji, Tokyo, JP;
Yoshitsugu Yamamoto, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438483 ; 438480 ; 438482 ; 438509 ; 257187 ; 257190 ;
Abstract
A method of preparing an AlInAs/GaAs hetero-structure includes forming an Al.sub.1-x In.sub.x As (0<x<1) buffer layer in an amorphous state on a GaAs substrate, annealing the amorphous buffer layer to crystallize the buffer layer into a single crystal buffer layer, and forming a single crystal Al.sub.1-x' In.sub.x' As (0<x'<1) active layer on the single crystal buffer layer.