The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Apr. 18, 1997
Applicant:
Inventors:
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438240 ; 438239 ; 438253 ; 438287 ; 438396 ;
Abstract
A method of forming a capacitor for a semiconductor device includes the steps of forming a gate electrode on a semiconductor substrate, forming an impurity diffused region on portions of the semiconductor substrate at sides of the gate electrode, forming a storage node electrode layer contacting one side of the impurity diffused region, forming a thermal nitride film on the storage node electrode layer, forming a Ta.sub.2 O.sub.5 layer on the thermal nitride film, and annealing the Ta.sub.2 O.sub.5 layer using an N.sub.2 O gas.