The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Apr. 22, 1999
Seung Woo Shin, Kyungki-Do, KR;
Il Keoun Han, Kyungki-Do, KR;
Sang Ho Woo, Kyungki-Do, KR;
Hoon Jung Oh, Kyungki-Do, KR;
Hong Seon Yang, Kyungki-Do, KR;
Hyundai Electronics Industries, Kyungki-Do, KR;
Abstract
The present invention is a method which can obtain an actual value close to a desired capacitance of capacitor by precisely monitoring the area variation rate of film by using a correlation between a height of hemispherical grains formed on a surface of film and a surface area of film. The present invention provides a method of calculating an area variation rate `C.sub.E ` by using the porosity ratio `f.sub.v ` and the height `t` of hemispherical grains and measuring the capacitance of capacitor by using the obtained area variation rate. According to this method, the area variation rate of film can be obtained close to actual value by measuring the height of hemispherical grains formed on the surface of film, and the variation in capacitance before completion of capacitor can be precisely obtained. In addition, the present invention has effects of improving the reliability and manufacturing yield of capacitor by enabling the monitoring of area variation rate close to actual value in the step of forming the hemispherical grains on the surface of film.