The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Apr. 02, 1998
Applicant:
Inventor:
Mamoru Furuta, Kanazawa, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
349 43 ; 257 66 ; 257 72 ;
Abstract
With a conventional thin film transistor comprising a plurality of series-connected thin film transistors each having a plurality of LDD structures, leakage current can be decreased to a large effect but the area of an element can hardly be reduced. By connecting gate electrodes (15) of a plurality of thin film transistors only with an implanted region (13b) which is formed by implanting an impurity at a low concentration into a semiconductor thin film employed as an active layer, both reduction in element size and decrease in leakage current can be realized.