The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Apr. 08, 1999
Joseph Herbert Johnson, Sunnyvale, CA (US);
Pablo Eugenio D'Anna, Los Altos, CA (US);
Xemod, Inc., Sunnyvale, CA (US);
Abstract
A lateral RF MOS device having a combined source connection structure is disclosed. The combined source connection structure utilizes a diffusion area and a conductive plug region. In one embodiment, the diffusion source area forms a contact region connecting the top surface of the semiconductor material to a highly conductive substrate of the lateral RF MOS transistor structure. In another embodiment, the diffusion source area is located completely within the epitaxial layer of the lateral RF MOS transistor structure. The conductive plug region makes a direct physical contact between a backside of the semiconductor material and the diffusion contact area.