The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Sep. 11, 1998
Jae-Hyun Joo, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
The present invention relates to a capacitor and a method of fabricating the same including a semiconductor substrate, an impurity region in the semiconductor substrate, a first insulating layer on the semiconductor substrate, the first insulating layer having a first contact hole to expose the impurity region, a first conductive layer in the contact hole, a second conductive layer on the first insulating layer, a second insulating layer on the first insulating layer including the second conductive layer, the second insulating layer contacting the first portion of the second conductive layer, a lower electrode on the second insulating layer, the lower electrode being not directly contacting the first conductive layer, a dielectric layer on the lower electrode including the second insulating layer, and an upper electrode on the dielectric layer.