The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Oct. 07, 1997
Gerard Argant Alphonse, Princeton, NJ (US);
James T Andrews, Hopewell, NJ (US);
Raymond J Menna, Newtown, PA (US);
Sarnoff Corporation, Princeton, NJ (US);
Abstract
A semiconductor electro luminescent diode having a body of a semiconductor material with the body having a pair of spaced opposed end surfaces, side surfaces and top and bottom surfaces. The body includes therein an active layer which extends from one end surface to a point spaced from the other end surface. The active layer is of a width narrower than the distance between the side surfaces. Also, the active layer has a portion adjacent the other end surface of the body which is tapered to come to a point. First clad layers of a material having an index of refraction smaller than that of the active layer are at opposite sides of the active layer and extend between the end of the active layer and the other end surface of the body. Second clad layers of a material having an index of refraction larger than that of the first clad layers but less than the index of refraction of the active layer are on the first clad layer. Radiation generated in the active layer and emitted from the pointed end of the active layer extends in area in the portion of the second clad layer between the pointed end of the active layer and the other end of the body so that the area of the beam of radiation emitted from the -diode is larger than the area of the beam formed in the active layer.