The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Aug. 17, 1998
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
The formation of self-assembled GaAs quantum dots on (100) GaAs via chemical beam epitaxy (CBE) technique using triethylgallium (TEGa) and arsine (AsH.sub.3) is disclosed. GaAs quantum dots are easy to grow from Ga-droplets which are successively supplied with arsine with neither pattern definition nor pre-treatment steps prior to the growth. The density and the size of Ga-droplets are found to be sensitive to the growth conditions, such as the growth temperature, the beam equivalent pressure of TEGa, and the amount of TEGa supplied. This invention suggests that, unlike Stranski-Krastanow growth, the Ga-droplet-induced CBE technique can be a useful method for the fabrication of quantum dot structure by simple change of gas supply mode, even in lattice-matched system.