The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Jun. 24, 1998
Jin Won Park, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A method for forming a device-isolating layer of a semiconductor device in which an APCVD oxide layer and an HDPCVD oxide layer are successively deposited to fill trenches. The method includes forming a thermal oxide layer on a semiconductor substrate including active regions and device-isolating regions, forming a nitride layer on the thermal oxide layer, selectively etching the nitride layer to be removed over the device-isolating regions and selectively etching the thermal oxide layer and the semiconductor substrate with the patterned nitride layer serving as a mask to form trenches. The method further includes forming another thermal oxide layer on the surface of the trenches, forming an APCVD oxide layer on the entire surface including the thermal oxide layer and the patterned nitride layer, forming and annealing an HDPCVD oxide layer on the entire surface of the APCVD oxide layer to fill the trenches. The HDPCVD oxide layer is then polished using a CMP process. However, the HDPCVD oxide layer remains in the trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile