The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Jul. 02, 1998
Donald A Draper, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Generally, decreasing the length of the channel in a CMOS transistor increases the speed of the transistor. However, the degree that the channel can be minimized is limited due to Hot Carrier Injection ('HCI'), which is related to the drain to source voltage and channel length. The present invention increases the speed of a circuit by decreasing the channel length of subset of transistors in the circuit. The subset is chosen by identifying instances where more than one transistor in series is used to discharge a capacitance. Those transistors are subject to lower drain to source voltages; therefore, the channel length can be reduced without suffering from the effects of HCI.