The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Jul. 24, 1998
Erik S Jeng, Hsinchu, TW;
Hung-Yi Luo, Taipei, TW;
Yue-Feng Chen, Hsinchu, TW;
Ming-Horn Tsai, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A method for forming a self-aligned contact, (SAC), opening, for a semiconductor device, has been developed. The process features the formation of partial silicon nitride spacers, on the sides of polycide gate structures, via a partial anisotropic RIE procedure, applied to a silicon nitride layer, also resulting in a thin layer of silicon nitride remaining on regions between polycide gate structures. After deposition of an overlying insulator layer, a two step, anisotropic RIE procedure is used to create the SAC opening in the insulator layer, and in the underlying, thin silicon nitride layer. The first step, of the two step, SAC opening procedure, selectively removes first insulator layer, while the second step, of the two step, SAC opening procedure, selectively removes the thin silicon nitride layer.