The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
Jan. 13, 1998
Applicant:
Inventor:
Etan Shacham, Cupertino, CA (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438294 ; 438297 ; 438298 ;
Abstract
A P-channel MOS device having an elevated breakdown voltage is created without increasing device size or requiring additional fabrication steps. During the P-field implant step, P type dopant is implanted into regions of the silicon expected to lie along the silicon-silicon dioxide interface after silicon dioxide growth. P type dopant implanted in this manner counteracts the effect of phosphorous accumulation at the silicon-silicon dioxide interface due to segregation of N type dopant during subsequent silicon dioxide growth steps