The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
May. 10, 1999
Shunji Yasumura, Tokyo, JP;
Shinya Watanabe, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device manufacturing method which involves a fewer number of manufacturing processes and which eliminates the use of expensive high precision stepper and half-tone mask, or the like, by employing a simplified process flow, in which method an identical mask is reused to ensure registration margin without involving a high-resolution process. A contact hole requires solely a minimum diameter of 0.30 .mu.m or thereabouts, thereby resulting in and added margin for the minimum diameter and eliminating a process for reducing a hole diameter. Even if the hole diameter has a deviation of about 0.05 .mu.m, contact can be established with a silicon substrate, thereby eliminating a necessity for an expensive, high precision stepper which has been required for ensuring a registration margin. A damaged layer, which would otherwise cause an increase in the resistance of the storage node direct contact, is eliminated simultaneously with etching of a thick polysilicon film, thus eliminating a chemical dry etching (CDE) process which has conventionally been used for removing a damaged layer.