The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2000
Filed:
May. 08, 1998
Applicant:
Inventors:
Hidemasa Takahashi, Tokyo, JP;
Junko Morikawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438167 ; 438800 ;
Abstract
A comb-shape MESFET assembly has a plurality of unit FETs including first, second and third groups of unit FETs. The pinch-off voltages of the unit FETs are different from group to group by a step difference. The different pinch-off voltages provide a tailored change in the third-order intermodulation distortion in the output of the MESFET assembly. The step difference in the pinch-off voltage is generated by different thicknesses or impurity concentrations of a semiconductor active layer, different gate length of the unit FETs or different types of stress in the gate insulator films.