The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Apr. 10, 1998
Yasushi Takahashi, Urawa, JP;
Tsutomu Takahashi, Tokyo, JP;
Kouji Arai, Kodaira, JP;
Tsugio Takahashi, Hamura, JP;
Shunichi Sukegawa, Plano, TX (US);
Shinji Bessho, Plano, TX (US);
Masayuki Hira, Dallas, TX (US);
Hitachi, Ltd., Tokyo, JP;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Described herein is a dynamic memory. An N channel type voltage clamp MOSFET is provided which has a drain supplied with a supply voltage supplied from an external terminal, a gate to which a boosted constant voltage is applied, and a source which outputs a constant voltage. The clamp voltage outputted from the source of the voltage clamp MOSFET is supplied to a common source line for each of P channel type amplification MOSFETs constituting a sense amplifier via a P channel type first power MOSFET switch-controlled by a sense amplifier activation signal, as a voltage for operating the sense amplifier. Further, the constant voltage outputted from the source of the voltage clamp MOSFET is supplied to an N-well region in which the P channel type first power MOSFET and the P channel type MOSFETs constituting the sense amplifier are formed, as a bias voltage.