The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
May. 23, 1997
Kenichi Arakawa, Fujisawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A solid-state imaging device has a storage section formed on a surface portion of a semiconductor substrate to receive and store signal charges, a discharge section formed on the surface portion of the substrate at a predetermined distance from the storage section, a reset section constituted by a depletion-type MOS transistor formed between the storage section and the discharge section, and reset voltage setting means for setting a voltage of a reset pulse to be applied to the reset section. The reset voltage setting section has first and second resistive elements series-connected between one end to which a predetermined voltage is applied and the other end which is grounded. A node which connects the first resistive element to the second resistive element is connected to a reset voltage application electrode. The second resistive element consists of a depletion-type MOS transistor, and the depletion-type MOS transistor has a depletion-type impurity layer formed by the same process as that of a depletion-type impurity layer of the reset section.