The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Jul. 25, 1997
Applicant:
Inventor:
Jean-Baptiste Quoirin, Tours, FR;
Assignee:
SGS-Thomson Microelectronics S.A., Gentilly, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257155 ; 257146 ; 257140 ; 257341 ; 257476 ;
Abstract
The present invention relates to a monolithic assembly of a vertical IGBT transistor and a vertical fast diode connected to the drain of the IGBT transistor, implemented in an N-type semiconductor substrate. The rear (or lower) surface of the structure is uniformly formed of a P-type layer having many openings through which the N-type substrate appears. This rear surface is covered with a material for establishing a Schottky contact with the substrate and an ohmic contact with the P-type layer.