The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
May. 21, 1997
Jong-Moon Choi, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A capacitor and a method of manufacturing a capacitor which includes the steps of sequentially forming an insulating layer and an etch stop layer over a semiconductor substrate; selectively etching the etch stop layer and the insulating layer to form a contact hole; forming a plug within the contact hole; forming a pillar on the etch stop layer adjacent to the plug and on the plug; forming a dielectric layer at the sides of the pillar; removing the pillar and forming a conductive layer over the dielectric layer; and forming an insulating layer over the conductive layer and etching the insulating layer and the conductive layer to expose the upper portion of the dielectric layer.