The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Dec. 30, 1997
Applicant:
Inventor:
Jiann Liu, Irving, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, US;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438217 ;
Abstract
A method for forming a dual-gate transistor includes the step of forming a gate oxide layer (18) over two transistor regions provided by a P-tank (12) and an N-tank (14). This is followed by depositing a layer of in-situ doped poly (20) and then masking off a portion of the poly layer (20) overlying the P-tank (12). This is then followed by diffusion of P-type impurities into the portion of the poly layer (20) overlying the N-tank (14) associated with the P-channel transistor. This is a process required for forming a DRAM memory. Utilizing the same oxide mask (22), a threshold implant is formed into the N-type (14).