The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Dec. 05, 1997
Earl V Atnip, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of removing photoresist material from a semiconductor wafer is disclosed. The method includes rinsing the semiconductor wafer in an organic solvent selected to dissolve the photoresist material. The method next rinses the semiconductor wafer in a light alcohol such as isopropyl alcohol. The method next subjects the semiconductor wafer to an alcohol vapor dry operation. An oxygen plasma ashing operation is then used to oxidize organic material on the semiconductor wafer. This is followed by another rinse. This post ash rinse includes only the light alcohol without the organic solvent. The post ash rinse may include dipping the semiconductor wafers into one or two isopropyl alcohol tanks. Finally is another alcohol vapor dry operation. The elimination of organic solvent use during the post ash rinse operation following the oxygen plasma ashing: reduces the organic solvent costs of acquisition, handling and disposal; reduces the length of time needed for the post ash rinse; reduces the capital equipment costs for the post ash rinse; and it is believed eliminates yield loss due to contaminants in the organic solvent.