Optical recording material and its fabrication method

Abstract

An optical recording medium comprises a substrate and a multilayer structure on the substrate. The multilayer structure comprises a phase change type recording layer and a pair of dielectric layers, at least one of which contains zinc sulfide optionally with silicon oxide. When a depth profile of the multilayer structure in a thickness direction thereof is found by Auger electron spectroscopy, a region having an intensity ratio S/Zn of 2 or lower exists across a thickness of at least 6.0 nm, calculated as SiO.sub.2, from the vicinity of an interface between the dielectric layer and the recording layer into the recording layer. In the vicinity of the interface between the dielectric layer and the recording layer, there is also a region having an intensity ratio S/Zn vs. O/Si relation that satisfies S/Zn<O/Si.