The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
May. 24, 1995
Applicant:
Inventor:
Tatsuya Takeuchi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117104 ; 117101 ; 117923 ; 438289 ; 438 41 ;
Abstract
A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate having a step on a surface thereof and growing a group III-V compound semiconductor layer on a surface of the semiconductor substrate by metal organic vapor phase epitaxy using a source gas added with halogenated hydrocarbon containing one or two halogen atoms per one molecule. The surface of a substrate with a step thereon can be planarized by depositing an embedding layer on a lower level area.