The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 29, 2000
Filed:
Jun. 04, 1997
Tsuguo Fukuda, Sendai, JP;
Norio Takeda, Tokyo, JP;
Mitsubishi Gas Chemical Company, Inc., Tokyo, JP;
Abstract
A garnet crystal for growing a substrate is used in manufacturing a magneto-optic element. The garnet is manufactured by a Czochralski method and has a chemical structure represented by La.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The garnet crystal is grown from a melt prepared by heating a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible, the oxides being mixed together in a weight proportion such that the atomic proportion is La:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile