The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2000

Filed:

Dec. 12, 1997
Applicant:
Inventor:

Akitaka Kimura, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 372 45 ;
Abstract

In accordance with the first present invention, a cladding layer is provided between a gallium nitride based semiconductor active region and a substrate made of a material having a refraction index which is not lager than a refraction index of gallium nitride. The cladding layer includes at least one Al.sub.x Ga.sub.1-x N layer. An averaged value of the index 'x' of aluminum of the above at least one Al.sub.x Ga.sub.1-x N layer is in the range of not less than 0.01 to less than 0.05 and a total thickness of the above at least one Al.sub.x Ga.sub.1-x N layer is not less than 0.7 micrometers as well as the cladding layer has an averaged refractive index which is lower than the refractive index of gallium nitride.


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